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IC And Discrete Device
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Domestic professional research and development manufacturer of semiconductor devices
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Insulated Gate Bipolar Transistor(IGBT)
Product
Insulated Gate Bipolar Transistor(IGBT)
产品型号
PD
IC
VCES
VCE(sat)
VGE(th)
封装
TYPE
(W)
(A)
(V)
(V)
IC(A)
VGE (V)
VCE(V)
IC(mA)
MIN.
MAX.
Package
clear
TO-220FL
TO-247
TO-252
TO-3P
BRGB15N65FL
152
30
650
1.85
15
15
30
1
4.5
6.5
TO-220FL
BRGH15N120D
150
30
1200
2.5
15
15
15
0.6
4.5
6.5
TO-247
BRGH25N120D
350
50
1200
2.45
25
15
15
0.6
4.5
6.5
TO-247
BRGB6N65DP
69
12
650
1.98
6
15
5
1
5.3
5.3
TO-252
BRG10N120D
208
20
1200
2.4
10
15
15
0.4
5.2
6.5
TO-3P
BRG15N120D
186
30
1200
2.5
15
15
15
15
3.5
7.5
TO-3P
BRG20N120D
240
40
1200
2.5
20
15
15
15
3.5
7.5
TO-3P
BRG25N120D
312
50
1200
2.5
25
15
15
15
3.5
7.5
TO-3P
BRG60N60D
310
120
600
2.9
60
15
-
0.5
4
6
TO-3P
BRG60N65D
310
120
650
2.2
60
15
15
0.8
5.3
6.3
TO-3P
Total: 10 Page
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